2SA1063 transistor equivalent, power transistor.
*Designed for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Complement to Type 2SC2487
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPL.
Image gallery
TAGS
Download (Size : 199.34KB)
